IEEE Microwave and Wireless Components Letters · 2016 · 59 citations · 7 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesMicrowave AmplifiersMicrowave Semiconductor DevicesPower AmplifiersWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsFractional BandwidthGallium Nitride (Gan) MaterialsGallium Nitride Power AmplifiersGan-based High-frequency DevicesHigh-efficiency Power AmplifiersPower Amplifier DesignPower OutputRadio Frequency Power Amplifiers
This letter presents the design strategy for an ultra-wideband, high-efficiency hybrid power amplifier based on a commercial GaN-HEMT. The measurement results demonstrate a state-of-the-art fractional bandwidth of 145.5%, with saturated output power higher than 10 W from 0.6 to 3.8 GHz and power added efficiency exceeding 46% in the whole band, thus covering most of the mobile frequencies and making this device suitable for small-base station applications. The simple design approach exploits a N-section transformer, and allows for a priori estimation of the bandwidth: in the proposed case, a good agreement between estimated and measured bandwidth is obtained.
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Kenle Chen, Dimitrios Peroulis · IEEE Transactions on Microwave Theory and Techniques · 2012 · 225 citations