Size-Dependence of Acceptor and Donor Levels of Boron and Phosphorus Codoped Colloidal Silicon Nanocrystals

Abstract

Size dependence of the boron (B) acceptor and phosphorus (P) donor levels of silicon (Si) nanocrystals (NCs) measured from the vacuum level was obtained in a very wide size range from 1 to 9 nm in diameter by photoemission yield spectroscopy and photoluminescence spectroscopy for B and P codoped Si-NCs. In relatively large Si-NCs, both levels are within the bulk Si band gap. The levels exhibited much smaller size dependence compared to the valence band and conduction band edges. The Fermi level of B and P codoped Si-NCs was also studied. It was found that the Fermi level of relatively large codoped Si-NCs is close to the valence band and it approaches the middle of the band gap with decreasing the size. The results suggest that below a certain size perfectly compensated Si-NCs, that is, Si-NCs with exactly the same number of active B and P, are preferentially grown, irrespective of average B and P concentrations in samples.