P‐Type Polar Transition of Chemically Doped Multilayer MoS₂ Transistor

Abstract

A high-performance multilayer MoS2 p-type field-effect transistor is realized via controllable chemical doping, which shows an excellent on/off ratio of 109 and a maximum hole mobility of 132 cm2 V−1 s−1 at 133 K. The developed technique will enable 2D materials to be used for future high-efficiency and low-power semiconductor device applications. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.