High-performance back-channel-etched thin-film transistors with amorphous Si-incorporated SnO2 active layer

Abstract

In this report, back-channel-etched (BCE) thin-film transistors (TFTs) were achieved by using Si-incorporated SnO2 (silicon tin oxide (STO)) film as active layer. It was found that the STO film was acid-resistant and in amorphous state. The BCE-TFT with STO active layer exhibited a mobility of 5.91 cm2/V s, a threshold voltage of 0.4 V, an on/off ratio of 107, and a steep subthreshold swing of 0.68 V/decade. Moreover, the device had a good stability under the positive/negative gate-bias stress.