Enhancement-mode single-layer CVD MoS2 FET technology for digital electronics

Abstract

2D nanoelectronics based on single-layer (SL) MoS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> offers great advantages for ubiquitous electronics. With new device technology, highly uniform E-mode FETs using SL CVD MoS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> with positive VT, large mobility, excellent subthreshold swing are achieved. The integrated inverter shows excellent voltage transfer characteristic, close to rail-to-rail operation, high noise margin, large voltage gain (~45) and small static power. The combinational and sequential digital circuits shown here serve as a toolbox of building blocks for realizing wide range of digital circuitry.