Formation of High-T_c Superconducting BiSrCaCu₂O_x Films on ZrO₂/Si(100)

Abstract

High- T c superconducting BiSrCaCu 2 O x films have been successfully prepared on Si(100) wafer coated with epitaxially grown tetragonal ZrO 2 as a buffer layer. The films have been formed by pyrolysis of 2-ethylhexanoates. Regarding superconducting features, T c (onset) observed is 97 K and T c (end) is 50 K. From the X-ray diffraction patterns, the c -axis of the superconducting crystal phase mostly orients perpendicular to the substrate. These present results seem to prove the usefulness of ZrO 2 layer on Si for the further application of high- T c oxide films for a part of sophisticated electronics devices.