Oxide-based Synaptic Transistors Gated by Sol–Gel Silica Electrolytes

Abstract

Low-temperature sol-gel processed silica electrolyte films showed a high specific capacitance of 3.0 μF/cm(2) due to the electric-double-layer (EDL) effect. Oxide-based transistors gated by such silica electrolyte films show a high on/off ratio (>10(7)) and a very low operation voltage (<2.0 V). The proton-related dynamic modulation in these devices makes them ideal candidates for biological synapse emulation. Short-term synaptic plasticity, such as paired pulse facilitation, was successfully emulated. Most importantly, spiking and logic operation were also demonstrated when two lateral in-plane gates were used as the presynaptic inputs. Our oxide-based EDL transistors gated by sol-gel processed silica electrolyte films provide an interesting approach for synaptic behavior emulation, which is interesting for brain-inspired neuromorphic systems.