Dielectric, ferroelectric and piezoelectric properties of sputtered PZT thin films on Si substrates: influence of film thickness and orientation

Abstract

Lead titanate zirconate Pb(Zr,Ti)O 3 (PZT) thin films were deposited on platinized silicon substrates by r.f. magnetron sputtering and crystallized with preferred (110) or (111) orientation by conventional annealing treatment. The film structure evolution was observed as a function of the film thickness. Whatever the film thickness in the range 0.07 3 m, the preferred orientation of the film is maintained. The film microstructure and, in particular, grain sizes varied with the film thickness; more precisely, grain sizes increases, both for ( The electrical properties such as dielectric, ferroelectric and piezoelectric ones were systematically evaluated functions of the film thickness and their orientation.