Synthesis of ZnSnN₂ crystals via a high‐pressure metathesis reaction

Abstract

The synthesis of crystals of a zinc‐ and tin‐based earth‐abundant element nitride (ZnSnN 2 ) semiconductor was successfully achieved via a metathesis reaction under high pressure. Pressures exceeding 5.5 GPa were required to obtain single‐phase crystals. The material's bandgap was determined to be 1.4 eV, which is ideal for photovoltaic absorbers and visible light‐active photocatalysts. The decomposition temperature of the material was estimated to be approximately 350‒400 °C at atmospheric pressure. Finally, the chemical stability of the material against alkali and acid solutions was sufficient for photovoltaic and photocatalytic applications.