High voltage module with low internal inductance for next chip generation - next High Power Density Dual (nHPD2)

Abstract

In order to obtain the full benefit of Wide Band Gap (WBG) semiconductor device, it is essential to reduce total system stray inductance. Hitachi's latest package technology development is the new high voltage package concept named next High Power Density Dual (nHPD2). The package offers not only a drastic reduction in the internal inductance by 75% from conventional modules, but also an increase in the power density compared with the latest F-version series modules. Hitachi formerly presented the latest generation F-series modules in 2014, showing a 20% higher power density compared to conventional devices in the market. nHPD2 provides even higher power densities, up to 10% more. The developed package is equipped with a current sensing function which enables the user to detect the voltage difference using the internal package inductance. Although it is challenging to apply the current sensing method using the internal inductance with high accuracy in spite of the extremely low inductance module, in this paper we propose a new current sensing algorism using the internal inductance and verified to show adequate accuracy.