Intrinsically stretchable and transparent thin-film transistors based on printable silver nanowires, carbon nanotubes and an elastomeric dielectric

TLDR

Thin‑film field‑effect transistors are fundamental to modern electronics, yet stretchable electronics require mechanically compliant, solution‑processable materials for stretchable thin‑film transistors. The study reports the fabrication of transparent thin‑film transistors that behave like elastomer films. Solution‑based fabrication yields devices with ~30 cm² V⁻¹ s⁻¹ mobility, 10³–10⁴ on/off ratio, >100 µA switching current, >50 µS transconductance, low operating voltages, and the ability to drive OLEDs. The devices endure up to 50 % strain and 500 cycles at 20 % strain with negligible electrical degradation, marking progress toward stretchable active‑matrix displays.

Abstract

Abstract Thin-film field-effect transistor is a fundamental component behind various mordern electronics. The development of stretchable electronics poses fundamental challenges in developing new electronic materials for stretchable thin-film transistors that are mechanically compliant and solution processable. Here we report the fabrication of transparent thin-film transistors that behave like an elastomer film. The entire fabrication is carried out by solution-based techniques, and the resulting devices exhibit a mobility of ∼30 cm 2 V −1 s −1 , on/off ratio of 10 3 –10 4 , switching current >100 μA, transconductance >50 μS and relative low operating voltages. The devices can be stretched by up to 50% strain and subjected to 500 cycles of repeated stretching to 20% strain without significant loss in electrical property. The thin-film transistors are also used to drive organic light-emitting diodes. The approach and results represent an important progress toward the development of stretchable active-matrix displays.