Cavity-Enhanced Measurements of Defect Spins in Silicon Carbide

Abstract

Engineering the photonic interface with spins in color centers, such as the $N\phantom{\rule{0}{0ex}}V$ center in diamond or the neutral divacancy in silicon carbide, is crucial for applications in quantum communication and precision sensing. Exploiting SiC's compatibility with conventional thin-film fabrication, the authors use on-chip nanoscale photonic crystal cavities to dramatically enhance the measurement of the spin and optical properties of color-center ensembles. These results bring us a step closer to realizing scaled-up defect-based quantum technologies.