The 3<i>s</i>3<i>p</i>³⁵<i>S</i>^oLevel in the Silicon Isoelectronic Sequence

Abstract

The 3s23p2 3P-3s3p3 5So intercombination lines in the silicon isoelectronic sequence have been observed for Si I-S III only. By combining ab initio calculations with isoelectronic trend analyses we have obtained predicted values for the 5S2o energy and wavelengths of the intersystem lines in Cl IV-Ni XV. The mixing of the 5S2o level with the triplet levels of the same configuration has been studied in detail. Theoretical results are given for the 5S2o lifetime and the relative intensity of the two intercombination lines. The results are compared with recent MCDF calculations of Huang.