Journal of Physics Condensed Matter · 2006 · 64 citations · 22 references
Natural SciencesMaterials SciencePhysicsMaterials PhysicsOptical MaterialsThin FilmsMagnetic OxidesMetal OxidesOptical Thin FilmsOxide SemiconductorsThin Film Optical PropertiesThin-film MaterialsBand GapMagnetron SputteringOptical Band GapOptical PropertiesPhotoluminescenceSolubilityThin Oxide FilmsZinc Oxides
MgxZn1−xO (MZO) thin films prepared by an rf magnetron sputtering technique are reported. The films were grown at room temperature and at relatively low rf power of 50 W. MZO thin films were found to possess preferred c-axis orientation and exhibited hexagonal wurtzite structure of ZnO up to a Mg concentration of 42 mol%. A small variation in the c-axis lattice parameter of around 0.3% was observed with increasing Mg composition, showing the complete solubility of Mg in ZnO. The band gap of the MZO films in the wurtzite phase varied linearly with the Mg concentration and a maximum band gap ∼4.19 eV was achieved at x = 0.42. The refractive indices of the MgO films were found to decrease with increasing Mg content. The observed optical dispersion data are in agreement with the single oscillator model. A photoluminescence study revealed a blue shift in the near band edge emission peak with increasing Mg content in the MZO films. The results show the potential of MZO films in various opto-electronic applications.
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Ferromagnetism above room temperature in bulk and transparent thin films of Mn-doped ZnO
Parmanand Sharma, Amita Gupta, K. V. Rao et al. · Nature Materials · 2003 · 1.8K citations
Mg x Zn 1−x O as a II–VI widegap semiconductor alloy
Akira Ohtomo, M. Kawasaki, Takashi Koida et al. · Applied Physics Letters · 1998 · 1.5K citations · Full text