Room‐Temperature Quantum Transport Signatures in Graphene/LaAlO₃/SrTiO₃ Heterostructures

Abstract

High mobility graphene field-effect devices, fabricated on the complex-oxide heterostructure LaAlO₃ /SrTiO₃ , exhibit quantum interference signatures up to room temperature. The oxide material is believed to play a critical role in suppressing short-range and phonon contributions to scattering. The ability to maintain pseudospin coherence at room temperature holds promise for the realization of new classical and quantum information technologies.