Temperature‐dependent optical, spectral, and thermal characteristics of InGaN/GaN near‐ultraviolet light‐emitting diodes

Abstract

The temperature‐dependent device characteristics of InGaN/GaN near‐ultraviolet light‐emitting diodes, operating at λ ∼380 nm, with a chip size of 0.5 × 1 mm 2 were reported. Their optical and spectral properties were measured and analyzed at different injection current levels and heatsink temperatures. The device performance showed the optical output power of 92.8 mW, forward voltage of 4.30 V, and emission peak wavelength of 380 nm at 350 mA and 298 K. The junction temperature ( T j ) was experimentally estimated via the forward voltage method, leading to a thermal resistance of ∼10.03 K W −1 . For comparison with the simulated T j , the three‐dimensional steady‐state heat transfer simulation based on the finite element method was also carried out.