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Solid-Phase Epitaxy of PbTiO<sub>3</sub> Thin Films on SrTiO<sub>3</sub> Single Crystal
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1985
Year
Materials ScienceOxide HeterostructuresMaterial AnalysisEngineeringSolid-phase EpitaxyFerroelectric ApplicationApplied PhysicsCondensed Matter PhysicsSemiconductor MaterialThin Film Process TechnologyThin FilmsMolecular Beam EpitaxyEpitaxial GrowthThin Film ProcessingSputtering GasPbtio 3
PbTiO 3 films were prepared by rf magnetron sputtering at relatively low temperature (200–300°C) and subsequent annealhig The composition of the sputtered films was investigated in detail and was found to strongly depend on the sputtering gas (Ar-10%O 2 ) pressure. The films fabricated at about 4 Pa had stoichiometry and a perovskite structure under a wide annealing temperature range. Under these conditions, epitaxial growth of PbTiO 3 film on SrTiO 3 single crystal was attempted. From RHEED patterns and transmission electron micrographs, it was confirmed that epitaxial films with high crystalline quality were obtained.