Correlations between pressure and bandwidth effects in metal–insulator transitions in manganites

Abstract

The effect of pressure on the metal–insulator transition in manganites with a broad range of bandwidths is investigated. A critical pressure is found at which the metal–insulator transition temperature, TMI, reaches a maximum value in every sample studied. The origin of this universal pressure and the relation between the pressure effect and the bandwidth on the metal–insulator transition are discussed.