Physics of Nonlinear Transport in Semiconductors.

Abstract

This is a report on the NATO Advanced Study Institute of Nonlinear Transport in Semiconductors, held at the Sogesta Center near Urbino, Italy, during 16-27 July 1979. The Institute was held to 'Provide young researchers with the foundations of the principles of nonlinear transport,' so that they might meet the challenges of nonlinear transport behavior that will be encountered in work with ultra-fine-geometry or ultra-high-speed semiconductor devices. The topics that were treated include phenomenological aspects of hot carriers, electronic structure and band renormalization, electron-phonon interactions, semi-classical and quantum transport, carrier-carrier interactions and screening, non-equilibrium phonon interactions, experimental aspects of hot carrier transport, high magnetic field effects, device effects, noise and diffusion, and optical excitation of hot carriers. (Author)