Evaluation of write error rate for voltage-driven dynamic magnetization switching in magnetic tunnel junctions with perpendicular magnetization

Abstract

Abstract We investigated the write error rate (WER) for voltage-driven dynamic switching in magnetic tunnel junctions with perpendicular magnetization. We observed a clear oscillatory behavior of the switching probability with respect to the duration of pulse voltage, which reveals the precessional motion of magnetization during voltage application. We experimentally demonstrated WER as low as 4 × 10 −3 at the pulse duration corresponding to a half precession period (∼1 ns). The comparison between the results of the experiment and simulation based on a macrospin model shows a possibility of ultralow WER (<10 −15 ) under optimum conditions. This study provides a guideline for developing practical voltage-driven spintronic devices.