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Pb-DOPING EFFECTS IN <font>Hg</font><sub>1−x</sub><font>Pb</font><sub>x</sub><font>Ba</font><sub>2</sub><font>Ca</font><sub>2</sub><font>Cu</font><sub>3</sub><font>O</font><sub>8+δ</sub>
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1993
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Materials ScienceIi-vi SemiconductorTransition Metal ChalcogenidesMaterial AnalysisEngineeringPhysicsExperimental AnalysisApplied PhysicsCondensed Matter PhysicsSuperconductivityHg VaporSolid-state ChemistrySemiconductor MaterialO 8+δNominal Composition
Samples with a nominal composition of Hg 1−x Pb x Ba 2 Ca 2 Cu 3 O 8+δ (x~0.1, 0.2, and 0.3) have been synthesized and characterized. The Pb-doping promotes the formation of the three CuO 2 -layer compound Hg 1−x Pb x Ba 2 Ca 2 Cu 3 O 8+δ , and reduces the release of Hg vapor at the synthesis temperature. The intergrain electric coupling is also significantly enhanced by the doping, resulting in lower normal-state resistivity and higher intergrain critical current density. The carrier concentration of the as-synthesized samples increases with the increase of x, ranging from underdoped (x~0) to overdoped (x≥0.2).