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Negative differential resistance in the I–V curves of Al<sub>2</sub>O<sub>3</sub>/AlGaN/GaN MIS structures
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Citations
22
References
2016
Year
Wide-bandgap SemiconductorElectrical EngineeringEngineeringSpecific ResistancePhysicsGan Mis StructureApplied PhysicsQuantum MaterialsCondensed Matter PhysicsAluminum Gallium NitrideGan Power DeviceIntervalley Electron TransferCategoryiii-v SemiconductorI–v CurvesNegative Differential Resistance
Negative differential resistance is firstly observed in <italic>I</italic>–<italic>V</italic> characteristic of GaN MIS structure, which is induced by intervalley electron transfer.
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