RuAl thin films on high–temperature piezoelectric substrates

Abstract

The phase formation, structural and electrical properties of thin Ru-Al alloy films prepared on LGS (La3Ga5SiO14) and CTGS (Ca3TaGa3Si2O14) as well as on Si/SiO2(reference) substrates are analyzed for samples prepared at room temperature and after annealing for 10 h in high vacuum at 600 °C and 800 °C. The physical characterization reveals a strong dependence of the film quality on the chosen substrate. While the RuAl phase is clearly formed on the Si/SiO2 reference substrate, the phase is not stable on LGS and only weakly formed on CTGS due to a substrate decomposition effect and related Ga and O diffusion into the RuAl film.