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Recombination Analysis in Cadmium Telluride Photovoltaic Solar Cells With Photoluminescence Spectroscopy
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Citations
29
References
2015
Year
Activation EnergyIi-vi SemiconductorElectrical EngineeringPhotoluminescenceEngineeringApplied PhysicsShallow DefectsCdte Solar CellsPlasmon-enhanced PhotovoltaicsChemistryRecombination AnalysisPhotoluminescence SpectroscopySolar CellsOptoelectronicsPhotovoltaicsCompound Semiconductor
We used photoluminescence (PL) spectroscopy to study recombination in polycrystalline CdS/CdTe photovoltaic solar cells with open-circuit voltages in the range of 0.899-0.895 V. From PL emission spectra, we identified defects with an activation energy of 0.11-0.12 eV in the junction and back-contact regions. At <;100 K, lifetimes in devices were similar to those in single crystals and ranged from 300-400 ns. Strong lifetime temperature dependence at 100-300 K suggests the presence of a relatively shallow recombination center. Therefore, it is possible that in CdTe solar cells, lifetime is limited by relatively shallow defects.
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