An Extensive Experimental Analysis of the Kink Effects in ${ S}_{22}$ and ${ h}_{21}$ for a GaN HEMT

Abstract

This paper, for the first time, analyzes in detail the kink phenomenon in S <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">22</sub> as observed in GaN HEMT technology. To gain a comprehensive understanding, the kink effect (KE) is studied with respect to temperature and bias conditions. The achieved results clearly show that the dependence of the KE on the operating condition should be mainly ascribed to the transconductance, which plays a determinant role in the appearance of this effect. Furthermore, the analysis is extended to investigate the peak in the magnitude of h <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">21</sub> showing its disappearance at low drain-source voltage, due to the increase of the intrinsic output conductance. The importance of this investigation originates from the fact that an accurate and complete characterization of these anomalous phenomena enables microwave engineers to properly take them into account during the modeling and design phases.enables microwave engineers to properly take them into account during the modeling and design phases.