A 40 Gb/s Monolithically Integrated Linear Photonic Receiver in a <formula formulatype="inline"><tex Notation="TeX">$0.25~\mu {\rm m}$</tex></formula> BiCMOS SiGe:C Technology

Abstract

This letter presents the first 40 Gb/s monolithically integrated silicon photonics linear receiver (Rx) comprising a germanium photodiode (Ge-PD) and a linear transimpedance amplifier (TIA). Measured optical-electrical (O/E) 3 dB bandwidth (BW) of the Rx is 31 GHz. At 40 Gb/s, the Rx achieves a sensitivity of <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$-3~{\rm dBm}$</tex></formula> average optical input power with BER of <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$2.5\times 10^{-11}$</tex></formula> . It operates at <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex Notation="TeX">$\lambda =1.55 ~\mu{\rm m}$</tex></formula> wavelength, uses 3.3 and 3.7 V power supplies, dissipates 275 mW of power, provides maximum differential output amplitude of <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex Notation="TeX">$500 ~{\rm mV}_{\rm pp}$</tex></formula> , and occupies an area of <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$3.2~{\rm mm}^{2}$</tex></formula> . The presented receiver achieves the highest bit rate among the published work in monolithically integrated silicon photonics receivers.