Publication | Open Access
High Responsivity, Bandpass Near-UV Photodetector Fabricated From PVA- $\hbox{In}_{2}\hbox{O}_{3}$ Nanoparticles on a GaN Substrate
33
Citations
13
References
2012
Year
Wide-bandgap SemiconductorUltraviolet LightShort Wavelength OpticOptical MaterialsEngineeringLaser ApplicationsOptoelectronic DevicesChemistryBandpass Near-uv PhotodetectorPhotodetectorsOptical PropertiesHigh PhotoresponsivityPhotophysical PropertyHealth SciencesElectrical EngineeringGan SubstratePhotochemistryHigh ResponsivityOptoelectronic MaterialsPhotonic MaterialsRise TimeUv-vis SpectroscopyBandpass Spectral ResponseApplied PhysicsGan Power DeviceOptoelectronicsSolar Cell Materials
High photoresponsivity in the near-ultraviolet (UV) range was observed for a photodetector fabricated from polyvinyl-alcohol (PVA)-coated In <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> nanoparticles. The high responsivity is due to large depletion region introduced by ion-adsorbed oxygen on the surface of In <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> nanoparticles. Experiments demonstrated that the photodetector exhibited either a low-pass or bandpass spectral response, depending on the illumination directions. Transient characteristics of photoconductivity have been studied, which shows a rise time of 700 s and a fall time of 1350 s.
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