High speed (>11 GHz) modulation of BCB-passivated 1.55 µm InGaAlAs-InP VCSELs

Abstract

MBE-grown InGaAlAs-InP vertical cavity surface emitting lasers with buried tunnel junction for 1.55 µm wavelength, passivated with benzocyclobutene (BCB) and coplanar contacts, are presented. The devices show superior modulation bandwidths up to 11.6 GHz. Wide open eye diagrams with 6 dB extinction ratio enable error-free data transmission at 10 Gbit/s in back-to-back configuration and over different fibres.