Physical Review B · 2015 · 51 citations · 36 references
We use an ionic liquid-assisted electric-field effect to tune the carrier density in an electron-doped cuprate ultrathin film and cause a two-dimensional superconductor-insulator transition (SIT). The low upper critical field in this system allows us to perform magnetic-field (B)-induced SIT in the liquid-gated superconducting film. Finite-size scaling analysis indicates that SITs induced both by electric and by magnetic fields are quantum phase transitions and the transitions are governed by percolation effects---quantum mechanical in the former and classical in the latter cases. Compared to the hole-doped cuprates, the SITs in the electron-doped system occur at critical sheet resistances $({R}_{c})$ much lower than the pair quantum resistance ${R}_{Q}=h/{(2e)}^{2}=6.45\phantom{\rule{0.16em}{0ex}}\mathrm{k}\mathrm{\ensuremath{\Omega}}$, suggesting the possible existence of fermionic excitations at finite temperatures at the insulating phase near the SITs.
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Continuous quantum phase transitions
S. L. Sondhi, S. M. Girvin, John P. Carini et al. · Reviews of Modern Physics · 1997 · 1.3K citations · Full text
Superconducting Dome in a Gate-Tuned Band Insulator
J. T. Ye, Yijin Zhang, Ryosuke Akashi et al. · Science · 2012 · 1.1K citations
Gate-tuned Band Insulator, Doped Band Insulators, Superconducting Material +12