Broad temperature plateau for high ZTs in heavily doped p-type SnSe single crystals

Abstract

The increased number of carrier pockets near the Fermi level and the optimized carrier concentration in doped SnSe single crystal can lead to a high average<italic>ZT</italic>_ave∼ 1.2 from 300 K to 800 K and a peak<italic>ZT</italic>_maxvalue in excess of 2.0 at 800 K along the crystallographic<italic>b</italic>-axis.