Advanced Materials · 2015 · 42 citations · 24 references
Materials EngineeringMaterials ScienceDislocation‐free Sige/si HeterostructuresEngineeringInnovative StrategyStrain RelaxationApplied PhysicsVertical Crystal GrowthSiliceneDefect FormationMultilayer HeterostructuresSemiconductor Device FabricationSilicon On InsulatorMicroelectronics
Defect-free mismatched heterostructures on Si substrates are produced by an innovative strategy. The strain relaxation is engineered to occur elastically rather than plastically by combining suitable substrate patterning and vertical crystal growth with compositional grading. Its validity is proven both experimentally and theoretically for the pivotal case of SiGe/Si(001).
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High-performance Ge-on-Si photodetectors
Jürgen Michel, Jifeng Liu, Lionel C. Kimerling · Nature Photonics · 2010 · 1.5K citations
Scattering of electrons at threading dislocations in GaN
Nils Weimann, L.F. Eastman, D. Doppalapudi et al. · Journal of Applied Physics · 1998 · 613 citations
Wide-bandgap Semiconductor, Electrical Engineering, Engineering +11