IEEE Transactions on Terahertz Science and Technology · 2015 · 50 citations · 17 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringWireless CommunicationsHigh-frequency Semiconductor DevicesMicrowave AmplifiersMicrowave Integrated CircuitsMicrowave Semiconductor DevicesMillimeter-wave CommunicationsRadio-frequency Integrated CircuitsBeam FormingBicmos TechnologyMicrowave TransmittersMillimeter-wave Integrated CircuitsSige Bicmos DesignTerahertz CommunicationsTransmitter DesignWilkinson Power Divider
This paper presents a 320-GHz 1 ×4 fully integrated phased array transmitter using 0.13- μm SiGe BiCMOS technology. The 1 ×4 array transmitter is aiming for terahertz wireless communication and is based on RF beam forming architecture. By integrating a 20-GHz phase-locked-loop (PLL) frequency synthesizer, an 80-GHz quadrupler, a 1:4 Wilkinson power divider network, four-way 80-GHz tunable attenuators, amplifiers, analog phase shifters, 320-GHz frequency quadruplers/modulators, and on-chip antenna arrays, the transmitter chip achieves a maximal EIRP of 10.6 dBm at 320 GHz with the 3-dB bandwidth of 20 GHz, and ± 12 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">°</sup> beam scanning range is obtained. The dc consumption of the whole chip is ~ 1000 mW and the total chip size is 8 × 4.3 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> .
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