X-Band GaN FET reliability

Abstract

Over the last 3 years under the Wide Band Gap Semiconductor (WBGS) DARPA program, TriQuint and their partners, II-VI, IQE, BAE, MIT, RPI and UTD, have performed multiple multi-structure, multi-wafer, multi-technology reliability experiments and failure analysis studies on its GaN on SiC HEMT technology for X-band applications. This manuscript summarizes the main results of this effort.