Development of substrate integrated waveguide power dividers

Abstract

Two classes of substrate integrated waveguide (SIW) power divider are presented, namely, Y- and T-types. Using arrays of via, the SIW power dividers and microstrip transitions are integrated on the same substrate. Design models are presented respectively for the Y- and T-junctions. Experimental results over the Ka band are given for both structures. The Y-junction shows a bandwidth of 25.2% at -18.5 dB while the T-junction shows a bandwidth of 10.2% at -19.0 dB.