Controlled Ambipolar Tuning and Electronic Superlattice Fabrication of Graphene via Optical Gating

Abstract

A novel optical gating method is demonstrated to achieve controllable ambipolar tuning of graphene on diverse semiconductor substrates. Furthermore, electronic fabrication to form erasable electronic superlattices in structurally homogenous graphene is proposed based on selective optical gating. The created p-p+ superlattices exhibits counterintuitive transport properties, which can be attributed to nonlinear effects in the carrier dynamics around the interfaces. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.