2014 · 12 citations · 9 references
EngineeringElectrical EngineeringCircuit TheoryPower ElectronicsSemiconductor DevicesDc-ac InvertersDevice ModelingElectrical TechnologyElectronics TechnologyNoise In Electronic DevicesPower QualityInverter ModelingInverter NoiseInverter SystemsSilicon Carbide (Sic) MaterialsSilicon Carbide Power DevicesSilicon Carbide Power ElectronicsVoltage NoiseWide Bandgap Semiconductor Converters
In recent years, the switching speed is increased accelerately. And, the increase of EMI by high dv/dt is a problem. In this paper, the Tri-phase 400 V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">rms</inf> inverter for system interconnections which used SiC-JFET is analyzed. And, it is shown that noise terminal voltage is analyzable with an error of ±15 dB by highly precise modeling.
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