High-power, high-temperature operation of GaInAsSb-AlGaAsSb ridge-waveguide lasers emitting at 1.9 μm

Abstract

Ridge-waveguide lasers emitting at /spl sim/1.9 μm have been fabricated from a multiple-quantum-well heterostructure with an active region consisting of five GaInAsSb wells and six AlGaAsSb barriers. At room temperature, single-ended cw output power as high as 100 mW has been obtained. The maximum cw operating temperature is 130/spl deg/C, with a characteristic temperature of 85 K between 20 and 80/spl deg/C.