Resistive switching behaviour in ZnO and VO ₂ memristors grown by pulsed laser deposition

Abstract

The resistive switching behaviour observed in microscale memristors based on laser ablated ZnO and VO 2 is reported. A comparison between the two materials is reported against an active device size. The results show that devices up to 300 × 300 μm 2 exhibit a memristive behaviour regardless of the device size, and 100 × 100 μm 2 ZnO‐based memristors have the best resistance off/on ratio.