Hydrogen-Implantation Induced Blistering and Layer Transfer of LaAIO[sub 3] and Sapphire

Abstract

Blistering and splitting in hydrogen‐implanted single crystalline and are demonstrated based on the Smart‐Cut® method with optimal implantation temperature and hydrogen dose. Thin layers of monocrystalline and sapphire were transferred onto target substrates. This approach may have significant potential in fabricating new materials combinations such as monocrystalline superconductor thin films on semiconductor substrates. ©1999 The Electrochemical Society