IEEE Photonics Technology Letters · 2013 · 22 citations · 13 references
EngineeringElectrical EngineeringMaterials SciencePhotonicsSemiconductor DevicesSemiconductor MaterialsOptical Properties Of SemiconductorsOptical SourcesOptoelectronic DevicesSemiconductor HeterostructuresSemiconductor LasersSemiconductor PhysicsControl Signal GenerationHeterostructure LasersHeterostructuresHigh-power LasersHigh-power Semiconductor LasersIntegrated Semiconductor LasersPulsed LasersSemiconductor Laser Diodes
High-power pulse semiconductor lasers based on epitaxially integrated thyristor heterostructures were developed. The possibility of generating high-power laser light pulses with duration on the order of 100 ns at control signal amplitude on the order of 40–100 mA at extremely low turn-on thyristor voltage of 10 V was demonstrated. The values reached for the peak pulse optical power and peak pulse current were 28 W and 37 A, respectively.
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Laser operation of a heterojunction bipolar light-emitting transistor
G. Walter, N. Holonyak, Meixin Feng et al. · Applied Physics Letters · 2004 · 158 citations