Long wavelength high-speed semiconductor lasers with carrier transport effects

Abstract

Carrier transport has a significant effect on the high-speed characteristics of semiconductor lasers. The authors show theoretically and experimentally that the low frequency rolloff and excess increase of damping due to carrier transport significantly limits the high-speed modulation bandwidth of long wavelength InGaAs(P)-InP quantum-well lasers. The inherent small conduction band offset and small hole diffusion constant of this material are responsible for the severe carrier transport effects. The authors also discuss the optimum design for the high speed modulation of the long wavelength lasers and the advantages of the InGaAlAs-InP material system.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>