A Ku-Band Interference-Rejection CMOS Low-Noise Amplifier Using Current-Reused Stacked Common-Gate Topology

Abstract

A Ku-band CMOS low-noise amplifier (LNA) with high interference-rejection (IR), wide gain control range, and low dc power consumption is presented. The LNA consists of two common-gate metal-oxide-semiconductor field-effect transistors interconnected with an interstage parallel tank for the IR. The stacked common-gate stages share the same dc bias current to reduce power consumption and have controllable gain by changing this dc current. The implemented 0.13 mum CMOS LNA achieves measured power gain of 10.8 dB, noise figure of 4.2 dB, output P <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1</sub> dB of -4.3 dBm at 15 GHz, while rejecting interference down to a 38.5 dB level. The gain control range is 23.3 dB by varying the gate voltage from 0.2 to 1.2 V. The LNA consumes only 4 mA from a 1.3-V supply.