Publication | Closed Access
Protection circuit for high power amplifiers operating under mismatch conditions
10
Citations
2
References
2007
Year
Unknown Venue
Electrical EngineeringEngineeringRf SemiconductorPower DeviceHigh Power AmplifierCircuit SystemElectronic EngineeringPower Semiconductor DeviceProtection CircuitPower ElectronicsMicroelectronicsCircuit AnalysisWin SemiconductorsPower Electronic Devices
A protection circuit is developed which protects transistors in the output stage of a high power amplifier against voltage breakdown as a result of mismatch. The circuit is applied in an S-band and X-band High Power Amplifier and measured under various mismatch conditions. The devices have been developed in the 6-inch 0.5 mum GaAs power pHEMT process (PP50-11) of WIN Semiconductors.
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