RF simulations and physics of the channel noise parameters within MOS transistors

Abstract

In this paper we report results for the RF channel noise parameters of MOS transistors. Our hope is that these results will provide RF CMOS circuit designers with a better understanding of the noise properties of a MOS device. The results were obtained from a physically based 2-D device noise simulator. The simulator inherently takes into account the microwave noise sources within the transistor. The drain channel noise as well as the induced gate noise are presented. The results show that drain channel noise is strongly influenced by short channel effects whereas induced gate noise is not. Furthermore, the excess noise in the channel due to hot electrons near the drain was determined to be less important than normally thought.