Chemical vapor deposition of graphene films

Abstract

Graphene films were grown on nickel films and foils using chemical vapor deposition. To date, similar growth has been reported at around 1000 degrees C using methane or ethylene as source gases. However, by using acetylene, we have achieved growth of graphene films between 650 and 700 degrees C. The electrical and optical properties, including high resolution transmission electron microscopy of these films, suggest that this technique is both viable and scalable for potential large area optoelectronic applications.