IEEE Transactions on Microwave Theory and Techniques · 1992 · 21 citations · 5 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesMicrowave AmplifiersMicrowave Integrated CircuitsMicrowave MeasurementsMicrowave Semiconductor DevicesPower AmplifiersGaas Microwave Integrated CircuitsGaas Monolithic Microwave Integrated CircuitsOn-wafer MeasurementPower InputPower OutputReflection Coefficient MeasurementSmith Chart AnalysisTransmission Coefficient Measurement
A unique on-wafer system that is capable of measuring load-pull contours on true high-power and large-periphery devices is described. Measurements are made under low duty cycle pulsed DC and RF conditions to minimize the effects of heating due to power dissipation in the on-wafer environment. With the current implementation of the load pull system, any load impedance on the Smith chart can be presented to the output of four watt devices. The system is fully error corrected for reflection coefficient, transmission coefficient, input power incident, input power delivered, and output power delivered. The system is capable of automatic control and measurement by means of a HP 9000 series workstation. Data for C-band MMIC power amplifiers and 2-mm GaAs FETs are presented.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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