Topological Insulator Thin Films of Bi₂Te₃ with Controlled Electronic Structure

Abstract

Topological insulator thin films of Bi2Te3 with controlled electronic structure can be grown by regulating the molecular beam epitaxy (MBE) growth kinetics without any extrinsic doping. N- to p-type conversion results from the change in the concentrations of TeBi donors and BiTe acceptors. This represents a step toward controlling topological surface states, with potential applications in devices.