A Fully Realized `Field Balanced' TrenchMOS Technology

Abstract

This paper presents an optimized low voltage Power MOSFET technology with a specific on-state resistance that surpasses that previously achievable with conventional TrenchMOS structures. Typical specific on- state resistances of 5.4 mOmega mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> and 8.9 mOmega mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> (plusmn0.8 mOmega mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> ) for avalanche voltages of 26.5V and 35.5V respectively have been achieved. These values compare favorably with the specific on-state resistances recently reported for the more complex charge-balanced (RESURF) structures.