IEEE Transactions on Industrial Electronics · 2014 · 63 citations · 19 references
EngineeringComputer EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsCmos Circuit DesignIntegrated Circuit DesignIntegrated Circuit DevicesIntegrated Circuit FabricationMixed-signal Integrated Circuit DesignMixed-signal IntegrationGate Driver DesignHigh-temperature ElectronicsLateral Power DevicesMosfet Gate DriversPower Electronics DevicesSilicon CarbideSilicon Carbide Gate DriversSilicon Carbide Power Devices
This paper is an important step toward the development of complex integrated circuit (IC) control electronics that have to attend to high-temperature environment power applications. We present in premiere a prototype set of essential mixed-signal ICs on SiC capable of controlling power switches and a lateral power MESFET able to operate at high temperatures, all embedded on the same chip. Also, we report for the first time the functionality of standard Si-CMOS topologies on SiC for the master-slave data flip-flop (FF) and data-reset FF digital building blocks designed with MESFETs. Concretely, we present the complete development of SiC-MESFET IC circuitry, able to integrate gate drivers for SiC power devices. This development is based on the mature and stable Tungsten-Schottky interface technology used for the fabrication of stable SiC Schottky diodes for the European Space Agency Mission BepiColombo.
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500$^{\circ}{\rm C}$ Bipolar Integrated OR/NOR Gate in 4H-SiC
Luigia Lanni, B. Gunnar Malm, Mikael Östling et al. · IEEE Electron Device Letters · 2013 · 91 citations · Full text
High Temperature Silicon Carbide CMOS Integrated Circuits
David Clark, Ewan P. Ramsay, A.E. Murphy et al. · Materials science forum · 2011 · 88 citations · Full text