SiC Integrated Circuit Control Electronics for High-Temperature Operation

Abstract

This paper is an important step toward the development of complex integrated circuit (IC) control electronics that have to attend to high-temperature environment power applications. We present in premiere a prototype set of essential mixed-signal ICs on SiC capable of controlling power switches and a lateral power MESFET able to operate at high temperatures, all embedded on the same chip. Also, we report for the first time the functionality of standard Si-CMOS topologies on SiC for the master-slave data flip-flop (FF) and data-reset FF digital building blocks designed with MESFETs. Concretely, we present the complete development of SiC-MESFET IC circuitry, able to integrate gate drivers for SiC power devices. This development is based on the mature and stable Tungsten-Schottky interface technology used for the fabrication of stable SiC Schottky diodes for the European Space Agency Mission BepiColombo.