IEEE Journal of Quantum Electronics · 1997 · 20 citations · 37 references
EngineeringElectrical EngineeringPhysicsOptoelectronicsPhotonicsQuantum MechanicsHigh-frequency Semiconductor DevicesLaser PhysicsNonlinear OpticsOptical SourcesQuantum WellsSemiconductor LasersCarrier DiffusionCarrier HeatingDephasing TimeEnergy RelaxationLasersModulation ResponseQuantum Well LasersResonant Frequency
We present a small-signal analysis of the modulation response by simultaneously considering the effects of spectral hole burning, carrier heating, and carrier diffusion capture-escape. An explicit form of the small-signal modulation response is obtained and the nonlinear gain coefficients associated with each physical process are defined. Further simplifications in our results will give analytical forms for calculating the resonant frequency and damping rate of the modulation response. One of the simplified versions of our results is shown to agree with previous investigations. The effects of the carrier dephasing time, energy relaxation time, and diffusion-capture-escape times on the high-speed performance of QW lasers are theoretically investigated.
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Femtosecond Photon Echoes from Band-to-Band Transitions in GaAs
P. C. Becker, H. L. Fragnito, C. H. Brito Cruz et al. · Physical Review Letters · 1988 · 451 citations
High-speed modulation of semiconductor lasers
R.S. Tucker · Journal of Lightwave Technology · 1985 · 399 citations
Ultra-high speed semiconductor lasers
Kam Y. Lau, A. Yariv · IEEE Journal of Quantum Electronics · 1985 · 237 citations